Discrete Semiconductor Products

IPP50N10S3L16AKSA1

Obsolete

MOSFET N-CH 100V 50A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 50A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP50N10S3L16AKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	100 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.7 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Qualification	Supplier Device Package	Technology
INFINEON IPP50N10S3L16AKSA1	175 °C	-55 °C	15.7 mOhm	20 V	100 V	4180 pF	4.5 V 10 V	TO-220-3	100 W	2.4 V	N-Channel	Through Hole	Automotive	64 nC	50 A	AEC-Q101	PG-TO220-3-1	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 50A (Tc) 100W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources