Integrated Circuits (ICs)

DS1270Y-70

Obsolete

Analog Devices Inc./Maxim Integrated

IC NVSRAM 16MBIT PARALLEL 36EDIP

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Integrated Circuits (ICs)

DS1270Y-70

Obsolete

Analog Devices Inc./Maxim Integrated

IC NVSRAM 16MBIT PARALLEL 36EDIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DS1270Y-70

Access Time	70 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization [custom]	2 M
Memory Organization [custom]	8
Memory Size	2 MB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	36-DIP Module (0.610", 15.49mm)
Supplier Device Package	36-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page	70 ns

DS1270Y Series

16M Nonvolatile SRAM

Part	Write Cycle Time - Word, Page	Supplier Device Package	Memory Size	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Type	Operating Temperature [Min]	Operating Temperature [Max]	Memory Organization [custom]	Memory Organization [custom]	Package / Case	Technology	Mounting Type	Access Time	Memory Interface	Memory Format	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]
Analog Devices Inc./Maxim Integrated DS1270Y-70	70 ns	36-EDIP	2 MB	5.5 V	4.5 V	Non-Volatile	0 °C	70 °C	2 M	8	36-DIP Module (0.610" 15.49mm)	NVSRAM (Non-Volatile SRAM)	Through Hole	70 ns	Parallel	NVSRAM
Analog Devices Inc./Maxim Integrated DS1270Y-70IND	70 ns	36-EDIP	2 MB	5.5 V	4.5 V	Non-Volatile	-40 ¯C	85 C	2 M	8	36-DIP Module (0.610" 15.49mm)	NVSRAM (Non-Volatile SRAM)	Through Hole	70 ns	Parallel	NVSRAM
Analog Devices Inc./Maxim Integrated DS1270Y-100		36-EDIP	2 MB	5.5 V	4.5 V	Non-Volatile	0 °C	70 °C	2 M	8	36-DIP Module (0.610" 15.49mm)	NVSRAM (Non-Volatile SRAM)	Through Hole	100 ns	Parallel	NVSRAM	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1270Y-100#		36-EDIP	2 MB	5.5 V	4.5 V	Non-Volatile	0 °C	70 °C	2 M	8	36-DIP Module (0.610" 15.49mm)	NVSRAM (Non-Volatile SRAM)	Through Hole	100 ns	Parallel	NVSRAM	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1270Y-70IND#	70 ns	36-EDIP	2 MB	5.5 V	4.5 V	Non-Volatile	-40 ¯C	85 C	2 M	8	36-DIP Module (0.610" 15.49mm)	NVSRAM (Non-Volatile SRAM)	Through Hole	70 ns	Parallel	NVSRAM
Analog Devices Inc./Maxim Integrated DS1270Y-70#	70 ns	36-EDIP	2 MB	5.5 V	4.5 V	Non-Volatile	0 °C	70 °C	2 M	8	36-DIP Module (0.610" 15.49mm)	NVSRAM (Non-Volatile SRAM)	Through Hole	70 ns	Parallel	NVSRAM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

Description

General part information

DS1270Y Series

The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources