Discrete Semiconductor Products

MCB85N06Y-TP

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MOSFET N-CH 60V 85A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 85A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCB85N06Y-TP

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2498 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCB85N06Y-TP	36 nC	-55 °C	175 ░C	2.4 V	20 V	85 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	2498 pF	D2PAK	N-Channel	85 W	Surface Mount	60 V	13 mOhm	10 V

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General part information

N-Channel 60 V 85A (Tc) 85W Surface Mount D2PAK

Technical documentation and resources