Discrete Semiconductor Products

BUK9615-100E,118

Obsolete

MOSFET N-CH 100V 66A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 66A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9615-100E,118

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6813 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	182 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Qualification	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. BUK9615-100E,118	AEC-Q101	66 A	Surface Mount	2.1 V	MOSFET (Metal Oxide)	100 V	5 V 10 V	10 V	6813 pF	175 °C	-55 °C	Automotive	60 nC	N-Channel	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	182 W	14 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.90

General part information

N-Channel 100 V 66A (Tc) 182W (Tc) Surface Mount D2PAK

Technical documentation and resources