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UPA1912TE(0)-T1-AT
Discrete Semiconductor Products

UPA1912TE(0)-T1-AT

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

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UPA1912TE(0)-T1-AT
Discrete Semiconductor Products

UPA1912TE(0)-T1-AT

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUPA1912TE(0)-T1-AT
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5.6 nC
Input Capacitance (Ciss) (Max) @ Vds810 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-95
Power Dissipation (Max)200 mW
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageSC-95
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

UPA1912TE Series

Pch Single Power MOSFET -12V -4. 5A 50mohm 6pin TMM/SC-95 Automotive

Documents

Technical documentation and resources