Discrete Semiconductor Products

SI7980DP-T1-GE3

Obsolete

MOSFET 2N-CH 20V 8A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 8A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7980DP-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1010 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	21.9 W, 19.8 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Power - Max
Vishay General Semiconductor - Diodes Division SI7980DP-T1-GE3	2 N-Channel (Half Bridge)	Surface Mount	PowerPAK® SO-8 Dual	8 A	22 mOhm	27 nC	-55 °C	150 °C	PowerPAK® SO-8 Dual	20 V	1010 pF	MOSFET (Metal Oxide)	2.5 V	19.8 W 21.9 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 8A 19.8W, 21.9W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources