Discrete Semiconductor Products

SI2343DS-T1

Obsolete

MOSFET P-CH 30V 3.1A SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 3.1A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2343DS-T1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs [Max]	53 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Mounting Type	Technology	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI2343DS-T1	20 V	Surface Mount	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	750 mW	21 nC	540 pF	SC-59 SOT-23-3 TO-236-3	53 mOhm	P-Channel	30 V	4.5 V 10 V	-55 °C	150 °C	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available