
ISO5451DW
LTB5.7KVRMS, 2.5A/5A SINGLE-CHANNEL ISOLATED GATE DRIVER WITH ACTIVE PROTECTION FEATURES
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ISO5451DW
LTB5.7KVRMS, 2.5A/5A SINGLE-CHANNEL ISOLATED GATE DRIVER WITH ACTIVE PROTECTION FEATURES
Technical Specifications
Parameters and characteristics for this part
| Specification | ISO5451DW |
|---|---|
| Approval Agency | CQC, CSA, VDE, UR |
| Common Mode Transient Immunity (Min) [Min] | 50 kV/çs |
| Current - Output High, Low | 1.5 A, 3.4 A |
| Current - Peak Output | 2.7 A, 5.5 A |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 16-SOIC |
| Package / Case [x] | 0.295 in |
| Package / Case [y] | 7.5 mm |
| Rise / Fall Time (Typ) [custom] | 20 ns |
| Rise / Fall Time (Typ) [custom] | 20 ns |
| Supplier Device Package | 16-SOIC |
| Technology | Capacitive Coupling |
| Voltage - Isolation | 5700 Vrms |
| Voltage - Output Supply [Max] | 30 V |
| Voltage - Output Supply [Min] | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.25 | |
| 10 | $ 4.71 | |||
| 40 | $ 4.45 | |||
| 120 | $ 3.86 | |||
| Newark | Each | 1 | $ 6.52 | |
| 10 | $ 6.13 | |||
| 25 | $ 5.80 | |||
| 80 | $ 5.54 | |||
| 120 | $ 5.31 | |||
| 280 | $ 5.05 | |||
| 520 | $ 4.96 | |||
| Texas Instruments | TUBE | 1 | $ 4.38 | |
| 100 | $ 3.84 | |||
| 250 | $ 2.69 | |||
| 1000 | $ 2.17 | |||
Description
General part information
ISO5451-Q1 Series
The ISO5451 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
Documents
Technical documentation and resources