Specification	FQT4N20LTF

Current - Continuous Drain (Id) @ 25°C	850 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.2 W
Rds On (Max) @ Id, Vgs	1.35 Ohm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQT4N20 Series

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor FQT4N20LTF	N-Channel	5.2 nC	Surface Mount	2.2 W	850 mA	SOT-223-4	310 pF	1.35 Ohm	10 V	5 V	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	200 V	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low level gate drive requirements allowing direct operation from logic drives

100% avalanche tested

4nC typical low gate charge

Technical documentation and resources