Discrete Semiconductor Products

AS3D020065A

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650V,20A SILICON CARBIDE SCHOTTK

Discrete Semiconductor Products

Active

650V,20A SILICON CARBIDE SCHOTTK

Technical Specifications

Parameters and characteristics for this part

Specification	AS3D020065A

Capacitance	1190 pF
Current - Average Rectified (Io)	56 A
Current - Reverse Leakage	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-220-2
Package Name	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.65 V

Part	Capacitance	Technology	Voltage - Forward (Vf) (Max)	Package / Case	Package Name	Reverse Recovery Time (trr)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max)
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020065A	1190 pF	SiC (Silicon Carbide) Schottky	1.65 V	TO-220-2	TO-220-2	0 ns	20 µA	175 °C	-55 °C	500 mA	No Recovery Time	500 mA 500 mA	56 A	Through Hole	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 650 V 56A Through Hole TO-220-2

Technical documentation and resources