Discrete Semiconductor Products

PSMN2R1-40PLQ

Obsolete

MOSFET N-CH 40V 150A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 150A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R1-40PLQ

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	87.8 nC
Input Capacitance (Ciss) (Max) @ Vds	9584 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Vgs (Max)	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN2R1-40PLQ	20 V	Through Hole	TO-220-3	-55 °C	175 ░C	40 V	TO-220AB	150 A	87.8 nC	MOSFET (Metal Oxide)	2.2 mOhm	N-Channel	2.1 V	9584 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 150A (Tc) 293W (Tc) Through Hole TO-220AB

Technical documentation and resources