Discrete Semiconductor Products

PHX20N06T,127

Obsolete

MOSFET N-CH 55V 12.9A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 12.9A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	PHX20N06T,127

Current - Continuous Drain (Id) (Tc)	12.9 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.8 nC
Input Capacitance (Ciss) (Max)	320 pF, 320 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Package Name	TO-220F
Power Dissipation (Max)	23 W
Rds On (Max)	75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Rds On (Max)	FET Type	Technology	Power Dissipation (Max)	Package / Case	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type
NXP USA Inc. PHX20N06T,127	55 V	320 pF 320 pF	75 mOhm	N-Channel	MOSFET (Metal Oxide)	23 W	Isolated Tab TO-220-3 Full Pack	20 V	-55 °C	150 °C	10 V	TO-220F	9.8 nC	4 V	12.9 A	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 55 V 12.9A (Tc) 23W (Tc) Through Hole TO-220F

Technical documentation and resources