Discrete Semiconductor Products

PHX20N06T,127

Obsolete

MOSFET N-CH 55V 12.9A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 12.9A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	PHX20N06T,127

Current - Continuous Drain (Id) @ 25°C	12.9 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	320 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	23 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Supplier Device Package
Freescale Semiconductor - NXP PHX20N06T,127	9.8 nC	MOSFET (Metal Oxide)	23 W	75 mOhm	-55 °C	150 °C	10 V	Through Hole	12.9 A	320 pF	N-Channel	55 V	20 V	TO-220-3 Full Pack Isolated Tab	TO-220F

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 12.9A (Tc) 23W (Tc) Through Hole TO-220F

Technical documentation and resources