Discrete Semiconductor Products

NHPV15S600G

Obsolete

DIODE GEN PURP 600V 15A TO220-2

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 15A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	NHPV15S600G

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.2 V

Part	Current - Average Rectified (Io)	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
ON Semiconductor NHPV15S600G	15 A	200 mA 500 ns	TO-220-2	3.2 V	150 °C	-55 °C	Through Hole	Standard	TO-220-2	50 ns	600 V	60 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 15A Through Hole TO-220-2

Technical documentation and resources