Discrete Semiconductor Products

IRLIZ34G

Obsolete

MOSFET N-CH 60V 20A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 20A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRLIZ34G

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division IRLIZ34G	60 V	N-Channel	42 W	MOSFET (Metal Oxide)	TO-220-3	1600 pF	4 V 5 V	35 nC	2 V	TO-220-3 Full Pack Isolated Tab	10 V	-55 °C	175 ░C	20 A	50 mOhm	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 20A (Tc) 42W (Tc) Through Hole TO-220-3

Technical documentation and resources