Discrete Semiconductor Products

PJS6413_S1_00001

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20V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6413_S1_00001

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	522 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJS6413_S1_00001	P-Channel	7 nC	20 V	150 °C	-55 °C	12 V	MOSFET (Metal Oxide)	1.2 V	SOT-23-6	82 mOhm	2 W	522 pF	SOT-23-6	1.8 V	4.5 V	Surface Mount	4.4 A

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General part information

P-Channel 20 V 4.4A (Ta) 2W (Ta) Surface Mount SOT-23-6

Technical documentation and resources