Discrete Semiconductor Products

NTMS4937NR2G

Obsolete

SINGLE N-CHANNEL POWER MOSFET 30V, 13.6A, 6.5MΩ

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Discrete Semiconductor Products

Obsolete

SINGLE N-CHANNEL POWER MOSFET 30V, 13.6A, 6.5MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS4937NR2G

Current - Continuous Drain (Id) @ 25°C	8.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2563 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	810 mW
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Single N-Channel Power MOSFET 30V, 13.6A, 6.5mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMS4937NR2G	2563 pF	Surface Mount	38.5 nC	2.5 V	810 mW	MOSFET (Metal Oxide)	8.6 A	8-SOIC	8-SOIC	3.9 mm	0.154 in	N-Channel	4.5 V 10 V	30 V	6.5 mOhm	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is a 30 V N-Channel Power MOSFET.

Technical documentation and resources