Discrete Semiconductor Products

SI1472DH-T1-E3

Obsolete

MOSFET N-CH 30V 5.6A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 5.6A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1472DH-T1-E3

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1.5 W, 2.8 W
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1472DH-T1-E3	SC-70-6	6-TSSOP SC-88 SOT-363	N-Channel	-55 °C	150 °C	20 V	5.6 A	380 pF	3 V	MOSFET (Metal Oxide)	Surface Mount	11 nC	1.5 W 2.8 W	4.5 V 10 V	30 V	57 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 5.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources

No documents available