Discrete Semiconductor Products

IXKC20N60C

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MOSFET N-CH 600V 15A ISOPLUS220

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 15A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXKC20N60C

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	114 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs (Max)
Littelfuse/Commercial Vehicle Products IXKC20N60C	-55 °C	150 °C	190 mOhm	ISOPLUS220™	ISOPLUS220™	3.9 V	2400 pF	114 nC	15 A	Through Hole	600 V	10 V	MOSFET (Metal Oxide)	N-Channel	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 9.55

General part information

N-Channel 600 V 15A (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available