Discrete Semiconductor Products

MMBD1701

Obsolete

DIODE GEN PURP 30V 50MA SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 30V 50MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	MMBD1701

Capacitance @ Vr, F	1 pF
Current - Average Rectified (Io)	50 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	700 ps
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

High Conductance Low Leakage 30 V, 50 mA Small Signal Diode

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Speed	Package / Case	Operating Temperature - Junction	Capacitance @ Vr, F	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Diode Configuration
ON Semiconductor MMBD1701	Standard	30 V	50 mA	50 nA	Any Speed	200 mA	SC-59 SOT-23-3 TO-236-3	150 °C	1 pF	Surface Mount	SOT-23-3	1.1 V	700 ps
ON Semiconductor MMBD1705A	Standard	30 V		50 nA	Any Speed	200 mA	SC-59 SOT-23-3 TO-236-3	150 °C		Surface Mount	SOT-23-3	1.1 V	1 ns	1 Pair Common Anode
ON Semiconductor MMBD1703A	Standard	30 V		50 nA	Any Speed	200 mA	SC-59 SOT-23-3 TO-236-3	150 °C		Surface Mount	SOT-23-3	1.1 V	1 ns	1 Pair Series Connection

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High Conductance Low Leakage 30 V, 50 mA Small Signal Diode

Technical documentation and resources