Discrete Semiconductor Products

PJA3415AE_R1_00001

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SOT-23, MOSFET

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Discrete Semiconductor Products

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SOT-23, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3415AE_R1_00001

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	907 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Qualification	Grade
Panjit International Inc. PJA3415A_R1_00001	46 mOhm	SOT-23	1.25 W	1.3 V	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	980 pF	12 V	MOSFET (Metal Oxide)	P-Channel	10 nC	-55 °C	150 °C	4.5 A	20 V	Surface Mount
Panjit International Inc. PJA3415AE_R1_00001	50 mOhm	SOT-23	1.25 W	1 V	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	907 pF	8 V	MOSFET (Metal Oxide)	P-Channel	24 nC	-55 °C	150 °C	4.3 A	20 V	Surface Mount
Panjit International Inc. PJA3415A-AU_R1_000A1	48 mOhm	SOT-23	1.25 W	1.3 V	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	980 pF	12 V	MOSFET (Metal Oxide)	P-Channel	10 nC	-55 °C	150 °C	4.5 A	20 V	Surface Mount	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4.3A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources