Discrete Semiconductor Products

SI7212DN-T1-GE3

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MOSFET 2N-CH 30V 4.9A PPAK 1212

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 4.9A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7212DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.6 V

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Mounting Type
Vishay General Semiconductor - Diodes Division SI7212DN-T1-GE3	36 mOhm	MOSFET (Metal Oxide)	1.6 V	30 V	PowerPAK® 1212-8 Dual	-55 °C	150 °C	4.9 A	Logic Level Gate	PowerPAK® 1212-8 Dual	11 nC	2 N-Channel (Dual)	Surface Mount

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General part information

Mosfet Array 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources