Discrete Semiconductor Products

CTNS-6603S

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DIODE ARRAY GP 300V 60A TO247-3

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Discrete Semiconductor Products

Active

DIODE ARRAY GP 300V 60A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	CTNS-6603S

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-247-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Mounting Type	Diode Configuration	Technology	Supplier Device Package
Sanken Electric USA Inc. CTNS-6603S	TO-247-3	100 µA	-40 °C	150 °C	300 V	1.2 V	200 mA 500 ns	60 A	Through Hole	1 Pair Common Cathode	Standard	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode Array 1 Pair Common Cathode 300 V 60A Through Hole TO-247-3

Technical documentation and resources