Discrete Semiconductor Products

BAW27-TAP

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DIODE GEN PURP 60V 600MA DO35

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Discrete Semiconductor Products

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DIODE GEN PURP 60V 600MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAW27-TAP

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	600 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Qualification	AEC-Q101
Reverse Recovery Time (trr)	6 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AH (DO-35)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Technology	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Qualification	Capacitance @ Vr, F	Speed
Vishay General Semiconductor - Diodes Division BAW27-TAP	6 ns	600 mA	175 °C	100 nA	Axial DO-204AH DO-35	Through Hole	Standard	Automotive	60 V	DO-204AH (DO-35)	1.25 V	AEC-Q101	4 pF	200 mA 500 ns

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General part information

Diode 60 V 600mA Through Hole DO-204AH (DO-35)

Technical documentation and resources