Discrete Semiconductor Products

1N5819-G

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DIODE SCHOTTKY 40V 1A 2-PIN DO-41 AMMO

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 40V 1A 2-PIN DO-41 AMMO

Technical Specifications

Parameters and characteristics for this part

Specification	1N5819-G

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, Axial, DO-41
Speed	500 ns, 200 mA
Supplier Device Package	DO-41
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If [Max]	600 mV

Part	Technology	Speed	Supplier Device Package	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Package / Case
Comchip Technology 1N5819-G	Schottky	200 mA 500 ns	DO-41	110 pF	600 mV	1 mA	-55 °C	150 °C	40 V	Through Hole	1 A	Axial DO-204AL DO-41

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General part information

Diode 40 V 1A Through Hole DO-41

Technical documentation and resources

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