Discrete Semiconductor Products

FDR844P

Obsolete

MOSFET P-CH 20V 10A SUPERSOT8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 10A SUPERSOT8

Technical Specifications

Parameters and characteristics for this part

Specification	FDR844P

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	74 nC
Input Capacitance (Ciss) (Max) @ Vds	4951 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-LSOP
Package / Case [x]	0.13 in
Package / Case [x]	3.3 mm
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [x]	Package / Case [x]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDR844P	10 A	P-Channel	4951 pF	-55 °C	150 °C	20 V	8-LSOP	0.13 in	3.3 mm	1.5 V	1.8 V 4.5 V	74 nC	SuperSOT™-8	11 mOhm	MOSFET (Metal Oxide)	Surface Mount	1.8 W	8 V
ON Semiconductor FDR840P	10 A	P-Channel	4481 pF	-55 °C	150 °C	20 V	8-LSOP	0.13 in	3.3 mm	1.5 V	2.5 V 4.5 V		SuperSOT™-8	12 mOhm	MOSFET (Metal Oxide)	Surface Mount	1.8 W	12 V	60 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 10A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8

Technical documentation and resources