Discrete Semiconductor Products

FQD19N10LTF

Obsolete

ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

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Discrete Semiconductor Products

FQD19N10LTF

Obsolete

ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQD19N10LTF

Current - Continuous Drain (Id) @ 25°C	15.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	50 W, 2.5 W
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQD1 Series

Part	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FQD1N80TF	20 Ohm	N-Channel	-55 °C	150 °C	TO-252AA	5 V	800 V	Surface Mount	1 A	2.5 W 45 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	195 pF	10 V	7.2 nC
ON Semiconductor FQD1N60TM	11.5 Ohm	N-Channel	-55 °C	150 °C	TO-252 (DPAK)	5 V	600 V	Surface Mount	1 A	2.5 W 30 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	150 pF	10 V		6 nC
ON Semiconductor FQD19N10LTF		N-Channel	-55 °C	150 °C	TO-252AA	2 V	100 V	Surface Mount	15.6 A	2.5 W 50 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	870 pF			18 nC	10 V	5 V
ON Semiconductor FQD1P50TF	10.5 Ohm	P-Channel	-55 °C	150 °C	TO-252AA	5 V	500 V	Surface Mount	1.2 A	2.5 W 38 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)		10 V		14 nC			350 pF
ON Semiconductor FQD12N20TM_F080	280 mOhm	N-Channel	-55 °C	150 °C	TO-252AA	5 V	200 V	Surface Mount	9 A	2.5 W 55 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	910 pF	10 V		23 nC
ON Semiconductor FQD1N60CTF	11.5 Ohm	N-Channel	-55 °C	150 °C	TO-252AA	4 V	600 V	Surface Mount	1 A	2.5 W 28 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	170 pF	10 V	6.2 nC
ON Semiconductor FQD19N10TM_F080		N-Channel	-55 °C	150 °C	TO-252AA	4 V	100 V	Surface Mount	15.6 A	2.5 W 50 W	25 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	780 pF	10 V	25 nC
ON Semiconductor FQD12N20TF	280 mOhm	N-Channel	-55 °C	150 °C	TO-252AA	5 V	200 V	Surface Mount	9 A	2.5 W 55 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	910 pF	10 V		23 nC
ON Semiconductor FQD18N20V2TF	140 mOhm	N-Channel	-55 °C	150 °C	TO-252AA	5 V	200 V	Surface Mount	15 A	2.5 W 83 W	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	1080 pF	10 V	26 nC
ON Semiconductor FQD19N10TF		N-Channel	-55 °C	150 °C	TO-252AA	4 V	100 V	Surface Mount	15.6 A	2.5 W 50 W	25 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	780 pF	10 V	25 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQD1 Series

N-Channel 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources

No documents available