Discrete Semiconductor Products

SIHH11N65EF-T1-GE3

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MOSFET N-CH 650V 11A PPAK 8 X 8

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Discrete Semiconductor Products

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MOSFET N-CH 650V 11A PPAK 8 X 8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH11N65EF-T1-GE3

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	1243 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	130 W
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHH11N65EF-T1-GE3	130 W	30 V	650 V	Surface Mount	PowerPAK® 8 x 8	MOSFET (Metal Oxide)	8-PowerTDFN	N-Channel	10 V	4 V	11 A	70 nC	-55 °C	150 °C	1243 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.38
	Digi-Reel®	1	$ 5.46
	Tape & Reel (TR)	3000	$ 2.07

General part information

N-Channel 650 V 11A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources