Discrete Semiconductor Products

PHB119NQ06T,118

Obsolete

MOSFET N-CH 55V 75A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB119NQ06T,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	7.1 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PHB119NQ06T,118	75 A	-55 °C	175 ░C	7.1 mOhm	20 V	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	53 nC	MOSFET (Metal Oxide)	D2PAK	Surface Mount	2820 pF	N-Channel	10 V	55 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 75A (Tc) 200W (Tc) Surface Mount D2PAK

Technical documentation and resources