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BA17818FP-E2

Discrete Semiconductor Products

RD3G03BATTL1

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Rohm Semiconductor

MOSFET, P-CH, 40V, 35A, TO-252 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsAbout Export Regulations RD3G03BAT ESD Data +26

BA17818FP-E2

Discrete Semiconductor Products

RD3G03BATTL1

Active

Rohm Semiconductor

MOSFET, P-CH, 40V, 35A, TO-252 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsAbout Export Regulations RD3G03BAT ESD Data +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3G03BATTL1

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	56 W
Rds On (Max) @ Id, Vgs	19.1 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.06
		10	$ 1.31
		100	$ 0.89
		500	$ 0.71
		1000	$ 0.65
	Digi-Reel®	1	$ 2.06
		10	$ 1.31
		100	$ 0.89
		500	$ 0.71
		1000	$ 0.65
	Tape & Reel (TR)	2500	$ 0.54
Newark	Each (Supplied on Full Reel)	2500	$ 0.56

Description

General part information

RD3G03BAT Series

RD3G03BAT is a low on-resistance power MOSFET suitable for switching applications.

Documents

Technical documentation and resources

About Export Regulations

Export Information

RD3G03BAT ESD Data

Characteristics Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

RD3G03BAT Data Sheet

Two-Resistor Model for Thermal Simulation

Part Explanation

Application Note

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Notes for Temperature Measurement Using Thermocouples

Measurement Method and Usage of Thermal Resistance RthJC

Report of SVHC under REACH Regulation

Environmental Data

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Types and Features of Transistors

Application Note

What is a Thermal Model? (Transistor)

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Package Dimensions

Package Information

Explanation for Marking

Package Information

What Is Thermal Design

About Flammability of Materials

Environmental Data

PCB Layout Thermal Design Guide

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Create Symbols for PSpice Models

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Reliability Test Result

Manufacturing Data

RD3G03BAT Series

Pch -40V -35A, TO-252 (DPAK), Power MOSFET

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	FET Type	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Rohm Semiconductor RD3G03BATTL1	DPAK (2 Leads + Tab) SC-63 TO-252-3	2100 pF	MOSFET (Metal Oxide)	P-Channel	2.5 V	56 W	19.1 mOhm	20 V	38 nC	40 V	150 °C	Surface Mount	4.5 V 10 V	35 A	TO-252