Discrete Semiconductor Products

IXFR36N60P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR ISOPLUS247

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DocumentsUR_QQQX2_E72873_20171208 Datasheet

Discrete Semiconductor Products

IXFR36N60P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR ISOPLUS247

Deep-Dive with AI

DocumentsUR_QQQX2_E72873_20171208 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR36N60P

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXFR36N60P Series

DiscMosfetN-CH HiPerFET-Polar ISOPLUS247

Part	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Littelfuse/Commercial Vehicle Products IXFR36N60P	5 V	TO-247-3	600 V	5800 pF	208 W	102 nC	30 V	Through Hole	-55 °C	150 °C	200 mOhm	ISOPLUS247™	MOSFET (Metal Oxide)	20 A	N-Channel	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.30
		30	$ 8.64

Description

General part information

IXFR36N60P Series

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings