Discrete Semiconductor Products

PHD3055E,118

Obsolete

MOSFET N-CH 60V 10.3A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 10.3A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD3055E,118

Current - Continuous Drain (Id) @ 25°C	10.3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PHD3055E,118	5.8 nC	N-Channel	33 W	250 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	10 V	10.3 A	150 mOhm	DPAK	20 V	60 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 10.3A (Tc) 33W (Tc) Surface Mount DPAK

Technical documentation and resources