Discrete Semiconductor Products

PJC7428_R1_00001

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SOT-323, MOSFET

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Discrete Semiconductor Products

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SOT-323, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7428_R1_00001

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs (Max)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PJC7428_R1_00001	-55 °C	150 °C	45 pF	Surface Mount	10 V	SC-70 SOT-323	MOSFET (Metal Oxide)	0.9 nC	N-Channel	30 V	300 mA	350 mW	1 V	1.2 Ohm	SOT-323	1.2 V 4.5 V

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General part information

N-Channel 30 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources