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3-XFDFN Exposed Pad
Discrete Semiconductor Products

BAS116QAZ

Active
Freescale Semiconductor - NXP

DIODE GP 75V 300MA DFN1010D-3

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DocumentsDatasheet
3-XFDFN Exposed Pad
Discrete Semiconductor Products

BAS116QAZ

Active
Freescale Semiconductor - NXP

DIODE GP 75V 300MA DFN1010D-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS116QAZ
Capacitance @ Vr, F2 pF
Current - Average Rectified (Io)300 mA
Current - Reverse Leakage @ Vr5 nA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / Case3-XDFN Exposed Pad
QualificationAEC-Q101
Reverse Recovery Time (trr)3 çs
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDFN1010D-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]75 V
Voltage - Forward (Vf) (Max) @ If [Max]1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.30
10$ 0.21
100$ 0.10
500$ 0.09
1000$ 0.06
2000$ 0.05
Digi-Reel® 1$ 0.30
10$ 0.21
100$ 0.10
500$ 0.09
1000$ 0.06
2000$ 0.05
Tape & Reel (TR) 5000$ 0.03
10000$ 0.03

Description

General part information

BAS116 Series

Diode 75 V 300mA Surface Mount DFN1010D-3

Documents

Technical documentation and resources