Discrete Semiconductor Products

MCB90N12-TP

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N-CHANNEL MOSFET, D2-PAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, D2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCB90N12-TP

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	120 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	4514 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	260 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCB90N12-TP	4 V	-55 °C	150 °C	Surface Mount	N-Channel	120 V	65 nC	20 V	260 W	4514 pF	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	7.2 mOhm	90 A
Micro Commercial Components MCB90N12A-TP	3 V	-55 °C	150 °C	Surface Mount	N-Channel	120 V		20 V	138 W	4600 pF	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK		90 A	9 mOhm	72 nC	4.5 V 10 V

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General part information

N-Channel 120 V 90A 260W Surface Mount D2PAK

Technical documentation and resources

No documents available