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MS100N01
Discrete Semiconductor Products

MS100N01

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Bruckewell

N CHANNEL MOSFET,100V,SOT-23

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MS100N01
Discrete Semiconductor Products

MS100N01

Active
Bruckewell

N CHANNEL MOSFET,100V,SOT-23

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMS100N01
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs310 mOhm
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3$ 0.08

Description

General part information

MS100N01

N CHANNEL MOSFET,100V,SOT-23

Documents

Technical documentation and resources