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TO-220AB PKG
Discrete Semiconductor Products

IRFB4310PBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 7 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRFB4310PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 7 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4310PBF
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]7670 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 10589$ 3.44
Tube 1$ 3.75
10$ 2.46
100$ 1.72
500$ 1.41
1000$ 1.31
2000$ 1.28

Description

General part information

IRFB4310 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources