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INFINEON IKFW50N65ES5XKSA1
Discrete Semiconductor Products

IKFW40N65ES5XKSA1

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INFINEON

THE IKFW40N65ES5 IS A 650 V, 40 A IGBT DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

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INFINEON IKFW50N65ES5XKSA1
Discrete Semiconductor Products

IKFW40N65ES5XKSA1

Active
INFINEON

THE IKFW40N65ES5 IS A 650 V, 40 A IGBT DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIKFW40N65ES5XKSA1
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge70 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]106 W
Reverse Recovery Time (trr)75 ns
Switching Energy320 µJ, 560 µJ
Td (on/off) @ 25°C [custom]17 ns
Td (on/off) @ 25°C [custom]124 ns
Test Condition400 V, 15 V, 30 A, 13 Ohm
Vce(on) (Max) @ Vge, Ic1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 33$ 7.22
Tube 1$ 8.56
30$ 5.00
120$ 4.21
510$ 3.75
1020$ 4.58
2010$ 4.29
NewarkEach 1$ 8.47
10$ 6.83
25$ 5.14
50$ 4.80
100$ 4.46
480$ 4.31
720$ 4.14

Description

General part information

IKFW40 Series

Hard-switching 650 V, 40 ATRENCHSTOP™ 5 S5IGBT discrete in TO-247advanced isolationpackage addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but easy design-in, faster time-to-market cycles and simplification of circuit design. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Documents

Technical documentation and resources