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2PB1219AS,115
Discrete Semiconductor Products

2PB1219AS,115

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Nexperia USA Inc.

PNP GENERAL PURPOSE TRANSISTOR

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2PB1219AS,115
Discrete Semiconductor Products

2PB1219AS,115

Active
Nexperia USA Inc.

PNP GENERAL PURPOSE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification2PB1219AS,115
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]170
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-323, SC-70
Power - Max [Max]200 mW
QualificationAEC-Q101
Supplier Device PackageSOT-323
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2646$ 0.30

Description

General part information

2PB1219AS Series

PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.