Specification	BSP149H6327XTSA1

Current - Continuous Drain (Id) @ 25°C	660 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	0 V
FET Feature	Depletion Mode
FET Type	N-Channel, N-Channel, Depletion Mode
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	1.8 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

BSP149 Series

Part	FET Type	FET Feature	Grade	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Qualification	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Technology
INFINEON BSP149H6327XTSA1	N-Channel N-Channel Depletion Mode	Depletion Mode	Automotive	1.8 W	200 V	14 nC	430 pF	0 V	10 V	1 V	PG-SOT223-4	TO-261-4 TO-261AA	1.8 Ohm	20 V	AEC-Q101	Surface Mount	660 mA	150 °C	-55 °C	MOSFET (Metal Oxide)
INFINEON BSP149H6906XTSA1	N-Channel N-Channel Depletion Mode	Depletion Mode	Automotive	1.8 W	200 V	14 nC	430 pF	0 V	10 V	1 V	PG-SOT223-4	TO-261-4 TO-261AA	1.8 Ohm	20 V	AEC-Q101	Surface Mount	660 mA	150 °C	-55 °C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources