Discrete Semiconductor Products

RSD050N10TL

LTB

MOSFETS RECOMMENDED ALT 755-RD3P050SNTL1

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Discrete Semiconductor Products

LTB

MOSFETS RECOMMENDED ALT 755-RD3P050SNTL1

Technical Specifications

Parameters and characteristics for this part

Specification	RSD050N10TL

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	15 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
Rohm Semiconductor RSD050N10TL	20 V	150 °C	100 V	15 W	190 mOhm	CPT3	5 A	N-Channel	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	10 V	530 pF	MOSFET (Metal Oxide)	14 nC	Surface Mount

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General part information

MOSFETS RECOMMENDED ALT 755-RD3P050SNTL1

Technical documentation and resources