Discrete Semiconductor Products

SSM6L36FE,LM

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-563(ES6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-563(ES6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L36FE,LM

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	330 mA, 500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.23 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-563(ES6)

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Feature	Drain to Source Voltage (Vdss)	Configuration	Operating Temperature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type
Toshiba Semiconductor and Storage SSM6L36FE,LM	1 V	630 mOhm	Logic Level Gate	20 V	N and P-Channel	150 °C	ES6	46 pF	SOT-563 SOT-666	330 mA 500 mA	1.23 nC	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	39575	$ 0.37

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources