Specification	CUS08F30,H3F

Capacitance @ Vr, F	170 pF
Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOD-323, SC-76
Speed	500 ns, 200 mA
Supplier Device Package	USC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	450 mV

CUS08F30 Series

Diodes, 30 V/0.8 A Schottky Barrier Diode, SOD-323(USC)

Part	Capacitance @ Vr, F	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Speed
Toshiba Semiconductor and Storage CUS08F30,H3F	170 pF	800 mA	125 °C	30 V	Surface Mount	SC-76 SOD-323	USC	50 µA	450 mV	Schottky	200 mA 500 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	538358	$ 0.21

General part information

Diodes, 30 V/0.8 A Schottky Barrier Diode, SOD-323(USC)

Technical documentation and resources