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PDIP (P)
Discrete Semiconductor Products

UC2610N

Obsolete
Texas Instruments

DUAL SCHOTTKY DIODE BRIDGE WITH 1-A PEAK FORWARD CURRENT

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PDIP (P)
Discrete Semiconductor Products

UC2610N

Obsolete
Texas Instruments

DUAL SCHOTTKY DIODE BRIDGE WITH 1-A PEAK FORWARD CURRENT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUC2610N
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr100 µA
Diode TypeSingle Phase
Mounting TypeThrough Hole
Operating Temperature [Max]125 °C
Operating Temperature [Min]-25 °C
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-PDIP
TechnologySchottky
Voltage - Forward (Vf) (Max) @ If [Max]1.3 V
Voltage - Peak Reverse (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 7.96
2400$ 7.96
Texas InstrumentsTUBE 1$ 9.38
100$ 7.65
250$ 6.01
1000$ 5.10

Description

General part information

UC2610 Series

This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors.

The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1610 in ceramic is designed for -55°C to 125°C environments but with reduced peak current capability. The UC2610 in plastic and ceramic is designed for -25°C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rating over a 0°C to 70°C temperature range.

Documents

Technical documentation and resources