Specification	SSM3K15F,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	7.8 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	200 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

SSM3K15F Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-346(S-Mini)

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Package / Case	Mounting Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3K15F,LF	1.5 V	20 V	S-Mini	SC-59 SOT-23-3 TO-236-3	Surface Mount	MOSFET (Metal Oxide)	200 mW	100 mA	N-Channel	30 V	7.8 pF	4 V	2.5 V	150 °C	4 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	16394	$ 0.18

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-346(S-Mini)

Technical documentation and resources