Technical Specifications
Parameters and characteristics for this part
| Specification | IPC014N03L3X1SA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | Sawn on foil |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 103445 | $ 0.17 | |
| N/A | 0 | $ 0.14 | ||
Description
General part information
IPC014N Series
With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life.
Documents
Technical documentation and resources