Discrete Semiconductor Products

IPP042N03LGHKSA1

NRND

MOSFET N-CH 30V 70A TO220-3

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 70A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP042N03LGHKSA1

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
INFINEON IPP042N03LGHKSA1	TO-220-3	Through Hole	70 A	38 nC	4.2 mOhm	79 W	4.5 V 10 V	N-Channel	20 V	175 °C	-55 °C	MOSFET (Metal Oxide)	30 V	2.2 V	3900 pF	PG-TO220-3-1
INFINEON IPP042N03LGXKSA1	TO-220-3	Through Hole	70 A	38 nC	4.2 mOhm	79 W	4.5 V 10 V	N-Channel	20 V	175 °C	-55 °C	MOSFET (Metal Oxide)	30 V	2.2 V	3900 pF	PG-TO220-3

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General part information

N-Channel 30 V 70A (Tc) 79W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available