HMC326MS8GETR
LTBGAAS INGAP HBT DRIVER AMPLIFIER SMT, 3.0 - 4.5 GHZ
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HMC326MS8GETR
LTBGAAS INGAP HBT DRIVER AMPLIFIER SMT, 3.0 - 4.5 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC326MS8GETR |
|---|---|
| Current - Supply | 130 mA |
| Frequency [Max] | 4.5 GHz |
| Frequency [Min] | 3 GHz |
| Gain | 21 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 5 dB |
| P1dB | 23.5 dBm |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| RF Type | General Purpose |
| Supplier Device Package | 8-MSOPG |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 24.68 | <1d |
| 10 | $ 21.53 | |||
| 25 | $ 20.44 | |||
| 100 | $ 18.94 | |||
| 250 | $ 18.05 | |||
| Tape & Reel (TR) | 500 | $ 17.42 | <1d | |
Description
General part information
HMC326 Series
The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.ApplicationsMicrowave RadiosBroadband Radio SystemsWireless Local Loop Driver Amplifier
Documents
Technical documentation and resources
