Discrete Semiconductor Products

FDB24AN06LA0

Obsolete

MOSFET N-CH 60V 7.8A/40A TO263AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 7.8A/40A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	FDB24AN06LA0

Current - Continuous Drain (Id) @ 25°C	40 A, 7.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
ON Semiconductor FDB24AN06LA0	TO-263 (D2PAK)	75 W	1850 pF	-55 °C	175 ░C	3 V	N-Channel	10 V	5 V	19 mOhm	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	7.8 A 40 A	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 7.8A (Ta), 40A (Tc) 75W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources