Discrete Semiconductor Products

KTC3199-O-AP

Obsolete

TRANS NPN 50V 0.15A TO-92S

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Discrete Semiconductor Products

Obsolete

TRANS NPN 50V 0.15A TO-92S

Technical Specifications

Parameters and characteristics for this part

Specification	KTC3199-O-AP

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Short Body, TO-226-3, Formed Leads
Power - Max [Max]	400 mW
Supplier Device Package	TO-92S
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
MCC (Micro Commercial Components) KTC3199-O-AP	NPN	400 mW	100 nA	150 mA	250 mV	50 V	Through Hole	70	TO-92S	Formed Leads TO-226-3 TO-92-3 Short Body	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 400 mW Through Hole TO-92S

Technical documentation and resources

No documents available