Discrete Semiconductor Products

PJW4P06A_R2_00001

Active

POWER MOSFET, P CHANNEL, 60 V, 4 A, 110 MILLIOHMS, SOT-223, 4 PINS, SURFACE MOUNT

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 60 V, 4 A, 110 MILLIOHMS, SOT-223, 4 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	PJW4P06A_R2_00001

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PJW4P06A_R2_00001	20 V	785 pF	TO-261-4 TO-261AA	Surface Mount	60 V	110 mOhm	SOT-223	150 °C	-55 °C	P-Channel	4 A	MOSFET (Metal Oxide)	3.1 W	2.5 V	4.5 V 10 V	10 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 4A (Ta) 3.1W (Ta) Surface Mount SOT-223

Technical documentation and resources